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1 MRF5S21100Hr3 MRF5S21100Hsr3 motorola rf device data the rf mosfet line rf power field effect transistors n - channel enhancement - mode lateral mosfets designed for w - cdma base station applications with frequencies from 2110 to 2170 mhz. suitable for tdma, cdma and multicarrier amplifier applica- tions. to be used in class ab fo r p c n - p c s / c e l l u l a r r a d i o a n d w l l applications. ? typical 2 - carrier w - cdma performance: v dd = 28 volts, i dq = 1050 ma, p out = 23 watts avg., full frequency band, channel bandwidth = 3.84 mhz, peak/avg. = 8.5 db @ 0.01% probability on ccdf. power gain ? 13.5 db drain efficiency ? 26% im3 @ 10 mhz offset ? - 37 dbc @ 3.84 mhz channel bandwidth acpr @ 5 mhz offset ? - 40 dbc @ 3.84 mhz channel bandwidth ? capable of handling 10:1 vswr, @ 28 vdc, 2140 mhz, 100 watts cw output power ? characterized with series equivalent large - signal impedance parameters ? internally matched, controlled q, for ease of use ? qualified up to a maximum of 32 v dd operation ? integrated esd protection ? lower thermal resistance package ? low gold plating thickness on leads, 40 ? nominal. ? in tape and reel. r3 suffix = 250 units per 56 mm, 13 inch reel. maximum ratings rating symbol value unit drain - source voltage v dss 65 vdc gate - source voltage v gs - 0.5, +15 vdc total device dissipation @ t c = 25 c derate above 25 c p d 273 1.56 watts w/ c storage temperature range t stg - 65 to +150 c operating junction temperature t j 200 c thermal characteristics characteristic symbol value (1) unit thermal resistance, junction to case case temperature 80 c, 100 w cw case temperature 80 c, 23 w cw r jc 0.57 0.64 c/w (1) refer to an1955/d, thermal measurement methodology of rf power amplifiers. go to http://www.motorola.com/semiconductors/rf . select documentation/application notes - an1955. note - caution - mos devices are susceptible to damage from electrostatic charge. reasonable precautions in handling and packaging mos devices should be observed. order this document by MRF5S21100H/d motorola semiconductor technical data MRF5S21100Hr3 MRF5S21100Hsr3 2170 mhz, 23 w avg., 28 v 2 x w - cdma lateral n - channel rf power mosfets case 465 - 06, style 1 ni - 780 MRF5S21100Hr3 case 465a - 06, style 1 ni - 780s MRF5S21100Hsr3 ? motorola, inc. 2004 rev 1 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
MRF5S21100Hr3 MRF5S21100Hsr3 2 motorola rf device data esd protection characteristics test conditions class human body model 2 (minimum) machine model m3 (minimum) charge device model c7 (minimum) electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics zero gate voltage drain leakage current (v ds = 65 vdc, v gs = 0 vdc) i dss ? ? 10 adc zero gate voltage drain leakage current (v ds = 28 vdc, v gs = 0 vdc) i dss ? ? 1 adc gate - source leakage current (v gs = 5 vdc, v ds = 0 vdc) i gss ? ? 0.5 adc on characteristics (dc) gate threshold voltage (v ds = 10 vdc, i d = 250 adc) v gs(th) 2.5 2.8 3.5 vdc gate quiescent voltage (v ds = 28 vdc, i d = 1050 madc) v gs(q) ? 3.8 ? vdc drain - source on - voltage (v gs = 10 vdc, i d = 2.5 adc) v ds(on) ? 0.24 0.3 vdc forward transconductance (v ds = 10 vdc, i d = 2.5 adc) g fs ? 6 ? s dynamic characteristics (1) reverse transfer capacitance (v ds = 28 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c rss ? 2.14 ? pf functional tests (in motorola test fixture, 50 ohm system) v dd = 28 vdc, i dq = 1050 ma, p out = 23 w avg., f1 = 2112.5 mhz, f2 = 2122.5 mhz and f1 = 2157.5 mhz, f2 = 2167.5 mhz, 2 - carrier w - cdma, 3.84 mhz channel bandwidth carriers. acpr measured in 3.84 mhz channel bandwidth @ 5 mhz offset. im3 measured in 3.84 mhz bandwidth @ 10 mhz offset. peak/avg. = 8.5 db @ 0.01% probability on ccdf. power gain g ps 12.5 13.5 ? db drain efficiency d 24 26 ? % intermodulation distortion im3 ? -37 -35 dbc adjacent channel power ratio acpr ? -40 -38 dbc input return loss irl ? -16 -9 db (1) part is internally matched both on input and output. f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
3 MRF5S21100Hr3 MRF5S21100Hsr3 motorola rf device data figure 1. MRF5S21100Hr3(hsr3) test circuit schematic r2 v bias v supply c11 c8 c7 c5 c14 c3 c10 c1 rf output rf input r1 z1 z2 z3 z4 z5 z6 z7 z9 z8 z16 z10 z11 z12 z15 z17 + z10 0.368 x 1.136 microstrip z11 0.151 x 0.393 microstrip z12 0.280 x 0.220 microstrip z13 0.481 x 0.142 microstrip z14 0.138 x 0.080 microstrip z15 0.344 x 0.080 microstrip z16 0.147 x 0.099 microstrip z17 0.859 x 0.080 microstrip pcb arlon gx - 0300 - ss - 22, 0.030 , r = 2.55 z1 0.674 x 0.080 microstrip z2 0.421 x 0.080 microstrip z3 0.140 x 0.080 microstrip z4 1.031 x 0.080 microstrip z5 0.380 x 0.643 microstrip z6 0.080 x 0.643 microstrip z7 0.927 x 0.048 microstrip z8 0.620 x 0.048 microstrip z9 0.079 x 1.136 microstrip dut b1 r3 c4 c13 c15 z13 z14 c2 c6 w1 r4 c12 + c9 table 1. MRF5S21100Hr3(hsr3) test circuit component designations and values part description part number manufacturer b1 short rf bead 95f786 newark c1, c2 8.2 pf chip capacitors, b case 100b8r2cp500x atc c3 5.6 pf chip capacitor, b case 100b5r6cp500x atc c4 0.1 f chip capacitor, b case cdr33bx104akws kemet c5, c7 7.5 pf chip capacitors, b case 100b7r5jp500x atc c6 1.2 pf chip capacitor, b case 100b1r2bp500x atc c8 1k pf chip capacitor, b case 100b102jp500x atc c9, c10 0.56 f chip capacitors, b case 700a561mp150x kemet c11 470 f, 63 v electrolytic capacitor 95f4579 newark c12 100 f, 50 v electrolytic capacitor 51f2913 newark c13 0.6 - 4.5 pf gigatrim variable capacitor 44f3358 newark c14 2.7 pf chip capacitor, b case 100b2r7cp500x atc c15 0.4 - 2.5 pf gigatrim variable capacitor 44f3367 newark r1 1 k chip resistor d5534m07b1k00r newark r2 560 k chip resistor cr1206564jt newark r3, r4 12 chip resistors rm73b2b120jt garrett electronics f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
MRF5S21100Hr3 MRF5S21100Hsr3 4 motorola rf device data b1 r2 c4 c12 c9 c3 c10 c5 c11 c6 c7 c8 w1 r4 c15 c14 c13 c1 r3 r1 c2 figure 2. MRF5S21100Hr3(hsr3) test circuit component layout cut out area v gg v dd mrf5s21100l rev 03 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5 MRF5S21100Hr3 MRF5S21100Hsr3 motorola rf device data typical characteristics 42 48 56 34 p3db = 51.88 dbm (154.17 w) v dd = 28 vdc, i dq = 1050 ma pulsed cw, 8 sec(on), 1msec(off) center frequency = 2140 mhz actual ideal p1db = 51.18 dbm (131.22 w) 55 53 52 50 49 36 37 38 41 40 54 51 35 39 5 15 2040 ?45 40 irl g ps acpr im3 f, frequency (mhz) figure 3. 2 - carrier w - cdma broadband performance g ps , power gain (db) v dd = 28 vdc, p out = 23 w (avg.), i dq = 1050 ma 2?carrier w?cdma, 10 mhz carrier spacing 3.84 mhz channel bandwidth peak/avg. = 8.5 db @ 0.01% probability (ccdf) im3 (dbc), acpr (dbc) ?50 ?10 ?20 ?30 ?40 input return loss (db) irl, 0 2060 2080 2100 2120 2140 2160 2180 2200 2220 2240 14 35 13 30 12 25 11 20 10 ?20 9 ?25 8 ?30 7 ?35 6 ?40 100 11 16 1 i dq = 1400 ma 650 ma p out , output power (watts) pep figure 4. two - tone power gain versus output power g ps , power gain (db) v dd = 28 vdc f1 = 2135 mhz, f2 = 2145 mhz two?tone measurement, 10 mhz tone spacing 1050 ma 850 ma 1250 ma 15 14 13 12 10 100 ?55 ?15 1 p out , output power (watts) pep figure 5. third order intermodulation distortion versus output power imd, third order intermodulation distortion (dbc) v dd = 28 vdc f1 = 2135 mhz, f2 = 2145 mhz two?tone measurement, 10 mhz tone spacing i dq = 1400 ma 650 ma 1050 ma 850 ma 1250 ma ?20 ?25 ?30 ?35 ?40 ?45 ?50 10 10 ?60 ?20 1 7th order two?tone spacing (mhz) figure 6. intermodulation distortion products versus tone spacing intermodulation distortion (dbc) imd, v dd = 28 vdc, p out = 100 w (pep), i dq = 1050 ma two?tone measurements, center frequency = 2140 mhz 5th order 3rd order 0.1 ?25 ?30 ?35 ?40 ?45 ?50 ?55 p in , input power (dbm) figure 7. pulse cw output power versus input power p out , output power (dbm) d d , drain efficiency (%) f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
MRF5S21100Hr3 MRF5S21100Hsr3 6 motorola rf device data typical characteristics 0 40 1 ?55 ?15 g ps acpr im3 p out , output power (watts) avg. w?cdma figure 8. 2 - carrier w - cdma acpr, im3, power gain and drain efficiency versus output power im3 (dbc), acpr (dbc) v dd = 28 vdc, i dq = 1050 ma f1 = 2135 mhz, f2 = 2145 mhz 2x w?cdma, 10 mhz @ 3.84 mhz channel bandwidth peak/avg. = 8.5 db @ 0.01% probability (ccdf) 35 ?20 30 ?25 25 ?30 20 ?35 15 ?40 10 ?45 5 ?50 10 d d , drain efficiency (%), g ps , power gain (db) 220 10 9 100 10 8 10 7 10 6 120 140 160 180 200 t j , junction temperature ( c) figure 9. mttf factor versus junction temperatur e this above graph displays calculated mttf in hours x ampere 2 drain current. life tests at elevated temperatures have correlated to better than 10% of the theoretical prediction for metal failure. divide mttf factor by i d 2 for mttf in a particular application. mttf factor (hours x amps 2 ) typical characteristics w - cdma test signal 10 0.0001 100 0 peak?to?average (db) figure 10. ccdf w - cdma 3gpp, test model 1, 64 dpch, 67% clipping, single carrier test signal probability (%) 10 1 0.1 0.01 0.001 24 68 figure 11. 2-carrier w-cdma spectrum f, frequency (mhz) ?110 ?120 ?70 ?20 ?80 ?60 ?50 (db) ?90 ?100 ?40 ?30 3.84 mhz channel bw ?im3 @ 3.84 mhz bw +im3 @ 3.84 mhz bw ?acpr @ 3.84 mhz bw +acpr @ 3.84 mhz bw 20 515 10 0 ?5 ?10 ?15 ?20 ?25 25 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
7 MRF5S21100Hr3 MRF5S21100Hsr3 motorola rf device data figure 12. series equivalent input and output impedance f mhz z source ? z load ? 2100 2120 2160 1.2 - j2.1 2.2 - j3.0 1.4 - j2.3 3.4 - j7.2 3.4 - j6.5 4.9 - j7.0 v dd = 28 vdc, i dq = 1050 ma, p out = 23 w avg. z o = 10 ? z load * f = 2100 mhz f = 2200 mhz z source f = 2100 mhz f = 2200 mhz 2200 1.7 - j2.1 3.4 - j8.6 z source = test circuit impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. z source z load input matching network device under test output matching network f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
MRF5S21100Hr3 MRF5S21100Hsr3 8 motorola rf device data notes f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
9 MRF5S21100Hr3 MRF5S21100Hsr3 motorola rf device data notes f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
MRF5S21100Hr3 MRF5S21100Hsr3 10 motorola rf device data notes f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
11 MRF5S21100Hr3 MRF5S21100Hsr3 motorola rf device data package dimensions case 465 - 06 issue f ni - 780 MRF5S21100Hr3 notes: 1. dimensioning and tolerancing per ansi y14.5m?1994. 2. controlling dimension: inch. 3. deleted 4. dimension h is measured 0.030 (0.762) away from package body. dim min max min max millimeters inches a 1.335 1.345 33.91 34.16 b 0.380 0.390 9.65 9.91 c 0.125 0.170 3.18 4.32 d 0.495 0.505 12.57 12.83 e 0.035 0.045 0.89 1.14 f 0.003 0.006 0.08 0.15 g 1.100 bsc 27.94 bsc h 0.057 0.067 1.45 1.70 k 0.170 0.210 4.32 5.33 n 0.772 0.788 19.60 20.00 q .118 .138 3.00 3.51 r 0.365 0.375 9.27 9.53 style 1: pin 1. drain 2. gate 3. source 1 3 2 d g k c e h s f s 0.365 0.375 9.27 9.52 m 0.774 0.786 19.66 19.96 aaa 0.005 ref 0.127 ref bbb 0.010 ref 0.254 ref ccc 0.015 ref 0.381 ref q 2x m a m bbb b m t m a m bbb b m t b b (flange) seating plane m a m ccc b m t m a m bbb b m t aa (flange) t n (lid) m (insulator) m a m aaa b m t (insulator) r m a m ccc b m t (lid) case 465a - 06 issue f ni - 780s MRF5S21100Hsr3 notes: 1. dimensioning and tolerancing per ansi y14.5m?1994. 2. controlling dimension: inch. 3. deleted 4. dimension h is measured 0.030 (0.762) away from package body. dim min max min max millimeters inches a 0.805 0.815 20.45 20.70 b 0.380 0.390 9.65 9.91 c 0.125 0.170 3.18 4.32 d 0.495 0.505 12.57 12.83 e 0.035 0.045 0.89 1.14 f 0.003 0.006 0.08 0.15 h 0.057 0.067 1.45 1.70 k 0.170 0.210 4.32 5.33 m 0.774 0.786 19.61 20.02 r 0.365 0.375 9.27 9.53 style 1: pin 1. drain 2. gate 5. source 1 2 d k c e h f 3 u (flange) 4x z (lid) 4x bbb 0.010 ref 0.254 ref ccc 0.015 ref 0.381 ref aaa 0.005 ref 0.127 ref s 0.365 0.375 9.27 9.52 n 0.772 0.788 19.61 20.02 u ??? 0.040 ??? 1.02 z ??? 0.030 ??? 0.76 m a m bbb b m t b b (flange) 2x seating plane m a m ccc b m t m a m bbb b m t a a (flange) t n (lid) m (insulator) m a m ccc b m t m a m aaa b m t r (lid) s (insulator) f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
MRF5S21100Hr3 MRF5S21100Hsr3 12 motorola rf device data information in this document is provided solely to enable system and software implementers to use motorola products. there are no express or i mplied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in th is document. motorola reserves the right to make changes without further notice to any products herein. motorola makes no warranty, represen tation or guarantee regarding the suitability of its products for any particular purpose, nor does motorola assume any liability arising out of the applicati on or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ?t ypical? parameters that may be provided in motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all oper ating parameters, including ?typicals?, must be validated for each customer application by customer?s technical experts. motorola does not convey any license under its patent rights nor the rights of others. motorola products are not designed, intended, or authorized for use as components in systems intended for surgical impl ant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the motorola product could create a s ituation where personal injury or death may occur. should buyer purchase or use motorola products for any such unintended or unauthorized application, buyer s hall indemnify and hold motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expens es, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized u se, even if such claim alleges that motorola was negligent regarding the design or manufacture of the part. motorola and the stylized m logo are registered in the us patent and t rademark office. all other product or service names are the proper ty of their respective owners. motorola, inc. is an equal opportunity/affirmative action employer. motorola inc. 2004 how to reach us: usa / europe / locations not listed : japan : motorola japan ltd.; sps, technical information center, motorola literature distribution 3 - 20 - 1, minami - azabu, minato - ku, tokyo 106 - 8573, japan p.o. box 5405, denver, colorado 80217 81-3- 3440 - 3569 1 - 800 - 521 - 6274 or 480 - 768 - 2130 asia / pacific : motorola semiconductors h.k. ltd.; silicon harbour centre, 2 dai king street, tai po industria l estate, tai po, n.t., hong kong 852 - 26668334 home page : http://motorola.com/semiconductors MRF5S21100H/d ? f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .

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